This document describes a C-band internally matched power GaAs FET with a frequency range of 5.9-6.4 GHz. The device features high output power, high power gain, high power added efficiency, and low distortion, making it suitable for power amplifiers and digital radio communication applications in the 5.9-6.4 GHz band.
The MGFC36V5964A is a C‑band internally impedance‑matched GaAs power FET designed for use in 5.9‑6.4 GHz band amplifiers. It is supplied in a hermetically sealed metal‑ceramic package for high reliability and is intended for high‑output‑power, low‑distortion applications such as power amplifiers and digital radio communication.
Key specifications include a typical P1dB of 4 W, linear gain of 10.5 dB, and a typical power‑added efficiency of 30 % across the band. Recommended bias is VDS = 10 V with ID = 1.2 A. The device can handle a drain current up to 3.75 A and a total power dissipation of 25 W, with a storage temperature range of –65 °C to +175 °C.
| Frequency band | 5.9‑6.4 GHz |
|---|---|
| P1dB (1 dB compression output power) | 4 W (typ.) |
| Linear Power Gain (GLP) | 10.5 dB (typ.) |
| Power Added Efficiency (PAE) | 30 % (typ.) |
| Third‑order intermodulation (IM3) | -45 dBc (typ.) |
| Drain current (ID) max | 3.75 A |
| Gate‑to‑drain breakdown voltage (V_GDO) | 15 V |
| Gate‑to‑source breakdown voltage (V_GSO) | 15 V |
| Reverse gate current (I_GR) | -10 mA |
| Forward gate current (I_GF) | 21 mA |
| Total power dissipation (PT) | 25 W |
| Storage temperature range | -65 °C to +175 °C |
| Junction temperature (Tj) | 175 °C |
| Transconductance (gm) | 1 S (typ.) |
| Thermal resistance (Rth ch‑c) | 5‑6 °C/W |
The device can handle a drain current up to 3.75 A.
It is designed for the 5.9 GHz to 6.4 GHz band.
Typical PAE is 30 % at 5.9‑6.4 GHz.