The MGFC39V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 – 3.6 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
The MGFC39V3436 is an internally impedance‑matched GaAs power FET designed for 3.4‑3.6 GHz band amplifiers. It is supplied in a hermetically sealed metal‑ceramic package for high reliability.
The document provides electrical characteristics, recommended bias conditions, mechanical outline dimensions and safety guidelines for designers using this device in RF power applications.
| Frequency band | 3.4‑3.6 GHz |
|---|---|
| Typical output power (P1dB) | 8 W |
| Linear power gain (GLP) | 12.5 dB (typ) |
| Power added efficiency (PAE) | 32 % (typ) |
| Gate‑to‑drain breakdown voltage (V_GDO) | 15 V |
| Gate‑to‑source breakdown voltage (V_GSO) | 15 V |
| Drain current (I_D) max | 7.5 A |
| Total power dissipation (P_T) | 42.8 W |
| Operating temperature limit | 175 °C |
| Storage temperature range | -65 °C to +175 °C |
The typical P1dB is 8 W when operated in the 3.4‑3.6 GHz band.
The device can handle up to 7.5 A of drain current.