The MGFC40V4450 is an internally impedance-matched GaAs power FET especially designed for use in 4.4-5.0GHz band amplifiers. The device features excellent output power, gain and efficiency.
The MGFC40V4450 is a C‑band internally matched GaAs power FET designed for 4.4‑5.0 GHz band amplifiers. It offers 10 W typical output power, 110 dB typical gain, and 32 % typical power‑added efficiency, all in a hermetically sealed metal‑ceramic package for high reliability.
The document includes recommended bias conditions (VDS = 10 V, ID = 2.4 A), absolute maximum ratings, and safety notices reminding users to consider proper circuit design, non‑flammable materials, and protection against malfunction. Legal and export‑control information is also provided.
| Frequency band | 4.4‑5.0 GHz |
|---|---|
| Typical output power | 10 W |
| Typical gain | 110 dB |
| Power‑added efficiency | 32 % |
| Maximum drain current | 7.5 A |
| Gate‑to‑drain breakdown voltage | -15 V |
| Total power dissipation | 42.8 W |
| Storage temperature range | -65 °C to +175 °C |
| Recommended bias VDS | 10 V |
| Recommended bias ID | 2.4 A |
The typical output power is 10 W at 4.4‑5.0 GHz.
Recommended bias is VDS = 10 V and ID = 2.4 A with a 50 Ω source impedance.
The maximum drain current rating is 7.5 A.
The device can be stored from –65 °C to +175 °C.