The MGFC36V5258 is a 5.2 – 5.8 GHz band 4W power GaAs FET specially designed for use in 5.2 – 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
The MGFC36V5258 is an internally impedance‑matched GaAs power FET designed for 5.2‑5.8 GHz band amplifiers. It is supplied in a hermetically sealed metal‑ceramic package for high reliability and operates in Class A with typical 4 W output power.
The document provides detailed electrical characteristics, recommended bias conditions, absolute maximum ratings, S‑parameter data and extensive safety information for circuit designers. Publication date is April 2011 and the data reflect Mitsubishi Electric’s specifications at that time.
| Frequency band | 5.2 – 5.8 GHz |
|---|---|
| Typical output power (P1dB) | 4 W (typ.) |
| Typical linear gain (GLP) | 10 dB (typ.) |
| Typical power added efficiency (PAE) | 32 % (typ.) |
| Gate‑to‑source breakdown voltage (VGS(off)) | 45 V |
| Total power dissipation (PT*1) | 25 W |
The typical output power is 4 W at 5.2 – 5.8 GHz.
The typical PAE is 32 % in the 5.2 – 5.8 GHz band.
Recommended bias is VDS = 10 V and ID = 1.2 A.