The MGFC40V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2-5.8 GHz band amplifiers.
The MGFC40V5258 is a C‑band internally impedance‑matched GaAs power FET designed for 5.2‑5.8 GHz band amplifiers. It is housed in a hermetically sealed metal‑ceramic package and provides typical 10 W output power with a linear gain of about 10 dB and a power‑added efficiency of 32 %.
Key electrical ratings include a gate‑to‑drain breakdown voltage of –15 V, gate‑to‑source breakdown voltage of –15 V, drain current up to 7.5 A, and total power dissipation of 42.8 W. Recommended bias conditions are VDS = 10 V, ID = 2.4 A, and RG = 500 Ω. Safety and legal notices emphasize proper circuit design and compliance with export regulations.
| Frequency band | 5.2 – 5.8 GHz |
|---|---|
| Typical output power | 10 W |
| Typical linear gain | 10 dB |
| Power added efficiency | 32 % |
| Gate‑to‑drain breakdown voltage | -15 V |
| Gate‑to‑source breakdown voltage | -15 V |
| Drain current (max) | 7.5 A |
| Reverse gate current | -20 mA |
| Forward gate current | 42 mA |
| Total power dissipation | 42.8 W |
| Storage temperature range | -65 °C to +175 °C |
| Junction temperature | 175 °C |
The MGFC40V5258 delivers a typical output power of 10 W in the 5.2‑5.8 GHz band.
Recommended bias is VDS = 10 V, ID = 2.4 A, and RG = 500 Ω.
The typical power added efficiency is 32 % at 5.2‑5.8 GHz.
The gate‑to‑drain breakdown voltage is –15 V.