The MGFC42V4450 is an internally impedance-matched GaAs power FET designed for use in 4.4-5.0 GHz band amplifiers. It features high output power, high power gain, high power added efficiency, and low distortion.
The MGFC42V4450 is an internally impedance‑matched GaAs power FET designed for 4.4‑5.0 GHz band amplifiers. It is supplied in a hermetically sealed metal‑ceramic package for high reliability.
Key features include Class A operation, 16 W typical output power, 12 dB typical gain, 32 % typical power‑added efficiency, and low distortion (IM3 = ‑45 dBc). Recommended bias conditions are VDS = 10 V, ID = 4.5 A with a source resistance of 25 Ω. Safety notices stress proper circuit design to avoid injury or damage.
| Frequency band | 4.4‑5.0 GHz |
|---|---|
| Typical linear gain | 12 dB |
| Power‑added efficiency | 32 % |
| Third‑order IM distortion | -45 dBc |
| Gate‑to‑drain breakdown voltage | 15 V |
| Gate‑to‑source breakdown voltage | 15 V |
| Drain current (max) | 15 A |
| Total power dissipation | 78.9 W |
| Operating temperature | 175 °C |
| Storage temperature range | -65 °C to +175 °C |
The typical output power is 16 W in the 4.4‑5.0 GHz band.
The typical linear gain is 12 dB at 4.4‑5.0 GHz.
The power‑added efficiency is typically 32 % in the 4.4‑5.0 GHz band.