MGFC45B3436B is a radio frequency power device produced by Mitsubishi Electric. The working frequency is 3.4-3.6GHz, the maximum output power is 30W, the output power gain is 11dB, and the distortion is -45dBc.
The MGFC45B3436B is an internally impedance‑matched GaAs power FET designed for 3.4‑3.6 GHz band amplifiers. It is supplied in a hermetically sealed metal‑ceramic package for high reliability.
Key specifications include a typical saturated output power of 30 W, a linear gain of 11 dB, and an adjacent‑channel leakage of –45 dB. Recommended bias is VDS = 12 V and ID = 0.8 A, with absolute maximum ratings such as Vgdo = ‑15 V, Vgso = ‑10 V, IDmax = 10 A, and total power dissipation of 78 W. Safety considerations are emphasized throughout the document.
| Frequency band | 3.4 – 3.6 GHz |
|---|---|
| Typical saturated output power (PoSAT) | 30 W |
| Linear power gain (GLP) | 11.0 dB |
| Adjacent channel power (ACP) | -45 dB |
| Gate‑to‑drain breakdown voltage (Vgdo) | -15 V |
| Gate‑to‑source breakdown voltage (Vgso) | -10 V |
| Maximum drain current (IDmax) | 10 A |
| Total power dissipation (PT) | 78 W |
| Recommended bias voltage (VDS) | 12 V |
The typical saturated output power is 30 W at 3.4‑3.6 GHz.
A drain‑source voltage of 12 V and a drain current of 0.8 A are recommended.
The gate‑to‑drain breakdown voltage is –15 V and the gate‑to‑source breakdown voltage is –10 V.
Users are advised to keep safety first in circuit designs, using non‑flammable materials and protective measures.