The MGFC45V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4-5.0 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
The MGFC45V4450A is an internally impedance‑matched GaAs power FET designed for 4.4‑5.0 GHz band amplifiers. It is supplied in a hermetically sealed metal‑ceramic package for high reliability and offers up to 32 W typical output power.
The document provides detailed electrical characteristics, recommended bias settings, absolute maximum ratings, S‑parameter data and extensive safety information for designers integrating this device into RF circuits.
| Frequency range | 4.4‑5.0 GHz |
|---|---|
| Typical linear gain (GLP) | 10.0 dB |
| Typical power added efficiency (PAE) | 34 % |
| Typical IM3 | -45 dBc |
| Gate‑to‑drain breakdown voltage (VGD0) | 15 V |
| Gate‑to‑source breakdown voltage (VGS0) | -45 V |
| Maximum drain current | 20 A |
| Maximum total power dissipation | 150 W |
| Thermal resistance (junction‑to‑case) | 0.8 °C/W |
It operates in the 4.4 GHz to 5.0 GHz band.
The device can handle up to 20 A of drain current.