MGFC42V5258 is a GaAs power field-effect transistor produced by Mitsubishi Electric. It is suitable for 5.2-5.8GHz band power amplifier applications.
The MGFC42V5258 is a GaAs power FET designed for 5.2‑5.8 GHz band amplifiers. It features an internally impedance‑matched 50 Ω design, high output power (16 W P1dB), and a linear gain of 10.5 dB.
The document provides electrical characteristics, recommended bias conditions, absolute maximum ratings, and extensive safety and usage guidelines for designers integrating this component into electronic systems.
| Output Power (P1dB) | 16 W typ |
|---|---|
| Linear Power Gain (GLP) | 10.5 dB typ |
| Power Added Efficiency (PAE) | 31 % typ |
| Gate‑to‑Drain Voltage (VGD) | 15 V max |
The device can tolerate up to 15 V gate‑to‑drain voltage.
Typical PAE is 31 % at 5.2‑5.8 GHz.
Typical linear power gain (GLP) is 10.5 dB.