MGFC40V6472 is an internally matched GaAs power FET designed for use in 6.4 - 7.2 GHz band amplifiers
The MGFC40V6472 is a C‑band internally matched GaAs power FET designed for 6.4‑7.2 GHz band amplifiers. It provides up to 10 W typical output power, 9 dB typical gain, and 32 % typical power‑added efficiency, making it suitable for high‑power, low‑distortion applications such as digital radio communication.
Mitsubishi Electric emphasizes safety and legal considerations: users should employ proper circuit layout, non‑flammable materials, and protective measures to avoid injury, fire, or equipment damage. The document also contains export‑control and liability notices.
| Frequency band | 6.4 – 7.2 GHz |
|---|---|
| Typical output power (P1dB) | 10 W |
| Typical linear power gain (GLP) | 9 dB |
| Typical power‑added efficiency (PAE) | 32 % |
| Third‑order intermodulation (IM3) | -45 dBc |
| Gate‑to‑drain breakdown voltage (V_GD0) | ‑15 V |
| Gate‑to‑source breakdown voltage (V_GS0) | ‑15 V |
| Maximum drain current (I_D) | 7.5 A |
| Reverse gate current (I_GR) | ‑20 mA |
| Forward gate current (I_GF) | 42 mA |
| Total power dissipation (P_T) | 42.8 W |
| Case temperature limit | 175 °C |
| Storage temperature range | -65 °C to +175 °C |
| Recommended bias – V_DS | 10 V |
| Recommended bias – R_G | 500 Ω |
The device delivers a typical output power of 10 W across the 6.4‑7.2 GHz band.
Recommended bias is V_DS = 10 V, I_D = 2.4 A, and gate resistance of 500 Ω.
The maximum drain current is rated at 7.5 A.
The device can be stored from –65 °C up to +175 °C.