The MGFC47A4450 is a power FET designed by Mitsubishi Electric Corporation for use in 4.4-5.0GHz band amplifiers. It has high output power, high gain and high efficiency.
The MGFC47A4450 is an internally impedance‑matched GaAs power FET designed for 4.4‑5.0 GHz band amplifiers. It is supplied in a hermetically sealed metal‑ceramic package for high reliability and is intended for radio‑link applications.
Typical performance includes 50 W output power, 10.5 dB linear gain, and 40 % power‑added efficiency at 10 V drain bias and 9.8 A drain current. The datasheet also provides recommended bias conditions, absolute maximum ratings, and S‑parameter data. Safety notes advise using non‑flammable materials and proper circuit design to avoid injury or fire.
| Frequency band | 4.4‑5.0 GHz |
|---|---|
| Linear power gain (GLP) | 10.5 dB |
| Power added efficiency (PAE) | 40 % |
| Recommended drain‑source voltage (VDS) | 10 V |
| Storage temperature range | -65 °C to +175 °C |
The FET can be stored from –65 °C up to +175 °C.