This document shows the RF characteristics data of MGF0951P, including evaluation conditions and results, for the frequency range of 2.11-2.17GHz.
This application note provides measured RF performance data for the MGF0951P semiconductor device over the 2.11‑2.17 GHz frequency band. It includes sample history, evaluation conditions, and detailed results such as output power, ACLR, and IMD.
The document also lists the test fixture components and shows the equivalent circuit of the device. Test conditions used a supply voltage of 10 V, bias current of 0.2 A, and temperatures of 25 °C and 80 °C.
| Frequency range | 2.11‑2.17 GHz |
|---|---|
| Supply voltage (VD) | 10 V |
| Bias current (IDQ) | 0.2 A |
| Test temperature | 25 °C |
| Board dielectric constant | 4.4 |
The data cover the 2.11‑2.17 GHz band.
Measurements were performed with a supply voltage of 10 V and a bias current of 0.2 A.
The equivalent circuit is presented on page 4 of the document.