This is an application note for MGF0951P RF characteristics data
The document presents measured RF performance of the MGF0951P semiconductor device, including power output, ACLR, IMD and other parameters under a 10 V supply and 0.2 A quiescent current. Test conditions such as temperature (25 °C) and frequency points (2.5‑2.7 GHz) are described.
It also includes the equivalent circuit of the device with component values (capacitors, inductors, resistors) and board material specifications (FR‑4, 0.8 mm thickness, dielectric constant 4.4). The data are organized in tables and graphs across the four‑page note.
| Frequency band | 2.5‑2.7 GHz |
|---|---|
| Supply voltage (VD) | 10 V |
| Quiescent current (IDQ) | 0.2 A |
| Board material | FR4, thickness 0.8 mm |
| Dielectric constant | 4.4 |
| Capacitor C1‑C4 | 708 pF (20 pF each) |
| Inductor L1‑L2 | 12 nH |
| Resistor R1 | 51 Ω |
The measurements were performed with a supply voltage of 10 V.
The RF test data cover the 2.5 GHz to 2.7 GHz band.