This application note shows the RF characteristics data of MGF0921A
The document presents measured RF performance of the MGF0921A semiconductor device across the 2.5‑2.7 GHz frequency range. Test conditions include a supply voltage of 10 V, quiescent current of 0.5 A, and temperatures of –20 °C and 25 °C.
An equivalent circuit is also supplied, detailing component values such as capacitors, inductors, and resistors, as well as board material specifications. These data support designers in evaluating the device for high‑frequency applications.
| Frequency range | 2.5‑2.7 GHz |
|---|---|
| Supply voltage (VD) | 10 V |
| Quiescent current (IDQ) | 0.5 A |
| Test temperature (Tc) | -20 °C, 25 °C |
| Capacitor C1‑C4 | 20 pF |
| Capacitor C5, C7, C8 | 1000 pF |
| Capacitor C9, C13, C14 | 0.5 pF |
| Capacitor C10‑C11 | 1 pF |
| Capacitor C12 | 2 pF |
| Capacitor C6 | 4.7 µF |
| Inductor L1‑L2 | 12 nH |
| Resistor R1 | 51 Ω |
| Resistor R2 | 200 Ω |
| Board material | FR4, 0.8 mm thickness |
| Dielectric constant | 4.4 |
The device is characterized for the 2.5‑2.7 GHz band.
Tests were performed with a supply voltage of 10 V and a quiescent current of 0.5 A.
Capacitors C1 through C4 each have a value of 20 pF.