Industrial

US6K1 is a N-channel MOSFET produced by ROHM company. It has the characteristics of low voltage drive, small package and low on-resistance.

US6K2 is a 4V Drive Nch+Nch MOSFET that features high-speed switching and low On-resistance.

US6K4 is a 1.8V drive Nch+Nch MOSFET produced by Toshiba, which has the characteristics of high-speed switching, low on-resistance and is suitable for switching applications.

This document describes the features and characteristics of ROHM's 1.5V Drive Nch+Pch MOSFET, including low on-resistance, low voltage drive, and built-in G-S protection diode. It is suitable for applications such as internal circuit switching.

US6M1 Transistors Rev.B is a silicon N-channel / P-channel MOSFET with low on-resistance, built-in G-S protection diode, and small surface mount package (TUMT6). It is suitable for power switching and DC/DC converter applications.

ML9XX31 series is Mitsubishi's DFB (Distributed Feedback) laser diode with monolithically integrated EA modulator, suitable light source for 10Gbps or 2.5Gbps application (Single channel / DWDM). Available wavelengths are from 1530nm to 1565nm with 0.8nm spacing. ML9SM31 is supplied with the chip-on-carrier type package.

US6M2 Nch+Pch MOSFET is a dual-channel MOSFET with low voltage drive, high switching speed and low on-resistance.

ML9XX11, ML9XX16 and ML9XX22 series are DFB (Distributed Feedback) laser diodes emitting light beam with emission wavelength of 1470 ~ 1610 nm. They are well suited for light source in long distance digital transmission application of coarse WDM. They are hermetically sealed devices with the photo diode for optical output monitoring.

US5U1 Nch+SBD MOSFET is a low voltage drive MOSFET device launched by ON Semiconductor. It has the characteristics of high switching speed, low on-resistance, low voltage drive, and built-in low VF Schottky diode. It is suitable for switch power supply application.

This document describes the features and characteristics of the US5U2 Transistors Rev.B 1/4 4V Drive Nch+SBD MOSFET, including high-speed switching, low on-resistance, 4V drive, and built-in low VF Schottky barrier diode.

The ML7000/ML7001 are single-channel CMOS CODEC LSI devices for voice signals ranging from 300 to 3400 Hz with filters for A/D and D/A conversion.

US5U3 is a high-voltage, low-voltage drive, low-voltage drop, high-switching frequency Nch+SBD MOSFET device. The device is packaged in TUMT5 and has a built-in low VF Schottky diode. It can be widely used in switch power supplies, DC/DC converters, LED drivers, motor drivers and other fields.

US5U38 Transistor is a product that combines a silicon P-channel MOSFET with a Schottky barrier diode. It features low on-resistance, fast switching, and low voltage drive (2.5V). It is suitable for switching applications.

This document introduces the features of MKP3V120/D bidirectional triggers, including maximum ratings, applications, and marking.

The US6U37 is a 2.5V drive Nch+SBD MOSFET, which has the features of high-speed switching, low on-resistance, low voltage drive, and built-in low VF Schottky diode. It is suitable for switching applications.