The US6U37 is a 2.5V drive Nch+SBD MOSFET, which has the features of high-speed switching, low on-resistance, low voltage drive, and built-in low VF Schottky diode. It is suitable for switching applications.
The US6U37 combines an N‑channel MOSFET and a Schottky barrier diode in a TUMT6 package. It is designed for low‑voltage drive (2.5 V) and high‑speed switching with low on‑resistance, making it suitable for inner‑circuit switching applications.
The datasheet provides absolute maximum ratings, electrical characteristics, and typical performance curves. It also includes package specifications, recommended measurement circuits, and safety notices for design engineers.
| Drain‑source voltage (VDS) | 30 V |
|---|---|
| Gate‑source voltage (VGS) | 12 V |
| Continuous drain current (ID) | 6 A |
| Power dissipation (P_D) | 0.7 W (per element) |
| Reverse voltage (VR) | 20 V |
| Forward voltage (VF) | 0.49 V |
| Storage temperature range | -55 °C to +150 °C |
| Junction temperature (Tj) | 150 °C |
The device can withstand up to 30 V drain‑source voltage.
A low drive voltage of 2.5 V is sufficient for operation.
The reverse leakage current is specified as 200 pA at 20 V reverse bias.
The device may be stored from –55 °C up to +150 °C.