Industrial

This document describes the features and characteristics of the S29GLxxxM MirrorBit TM Flash Family series products, including single power supply operation, 0.23um MirrorBit process technology, SecSi™ secured sector region, and flexible sector architecture.

DS1345 1024k Nonvolatile SRAMs are 1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-range condition and resets the processor when the condition is detected.

The DS1245Y/AB 1024k Nonvolatile SRAM features 10 years minimum data retention in the absence of external power and is automatically protected during power loss. It replaces 128k x 8 volatile static RAM, EEPROM or Flash memory, has unlimited write cycles, and is low-power CMOS. Read and write access times are as fast as 70 ns. The lithium energy source is electrically disconnected to retain freshness until power is applied for the first time.

The S1T8825B is a high-performance dual frequency synthesizer with two integrated high-frequency pre-scalers for RF operation up to 1.3 GHz. It is composed of modulus pre-scalers providing 64 and 66, no dead-zone PFD, selectable charge pump current, selectable power down mode circuits, lock detector output, and loop filter’s time constant switch. It is fabricated using the ASP5HB Bi-CMOS process and is available in a 16-TSSOP package. Serial data is transferred into the S1T8825B via a three-wire interface (CK, DATA, EN).

The document describes the features and characteristics of the 200-Pin Small Outline Dual-In-Line Memory Modules SO-DIMM DDR SDRAM with model numbers HYS64D32020[H/G]DL–5–C and HYS64D[32020/16000][H/G]DL–6–C.

80C186XL/80C188XL 16-BIT HIGH-INTEGRATION EMBEDDED PROCESSORS, Low Power, Fully Static Versions of 80C186/80C188

This document is a datasheet for the TN4-25702 crystal unit. It provides information on the unit's features and specifications, such as its size, frequency tolerance, and temperature range.

The HYB 5116400BJ/BT 4M x 4-DRAM is a 16MBit dynamic random access memory organized as 4194304 words by 4-bits. The HYB 5116400BJ/BT utilizes a submicron CMOS silicon gate process technology, as well as advanced circuit techniques to provide wide operating margins, both internally and for the system user. Multiplexed address inputs permit the HYB 5116400BJ/BT to be packaged in a standard SOJ 26/24 or TSOPII-26/24 plastic package, both with 300 mil width. These packages provide high system interconnectability, high reliability and cost effectiveness.

This document describes the features and characteristics of TMS320LF2407, TMS320LF2406, and TMS320LF2402 chips. These chips utilize high-performance static CMOS technology and feature low-power 3.3V design and high performance. The chips have integrated Flash EEPROM, data/program RAM, dual-access RAM, and single-access RAM. Additionally, the chips have two event manager modules for pulse-width modulation control, external event capture, and other functionalities. They are suitable for various motor control applications including AC induction motors, brushless DC motors, switched reluctance motors, and stepper motors.

This document is about HYB39S256400D[C/T](L) HYB39S256800D[C/T](L) HYB39S256160D[C/T](L) 256-MBit Synchronous DRAM SDRAM products' datasheet.

S102T01/S202T01/S102T02/S202T02 is a low-height solid state relay produced by Panasonic. The feature is that there is no zero-cross circuit and can be used for AC 100V/200V voltage control

This is a 24 and 40 watt peak power Zener transient voltage suppressor for ESD protection, using SOT-23 dual common anode Zener design to protect two separate lines using only one package

This data manual describes the features and usage of TMS320F2810, TMS320F2811, TMS320F2812 and TMS320C2810, TMS320C2811, TMS320C2812 Digital Signal Processors.

MM1203 is a three-channel video amplifier with wideband characteristics, suitable for high-resolution RGB color monitors, and can independently adjust the gain of each video amplifier, and provide internal video input reference voltage.