US5U1 Nch+SBD MOSFET is a low voltage drive MOSFET device launched by ON Semiconductor. It has the characteristics of high switching speed, low on-resistance, low voltage drive, and built-in low VF Schottky diode. It is suitable for switch power supply application.
The US5U1 combines an N‑channel MOSFET and a Schottky barrier diode in a TUMTS5 package. It offers high‑speed switching, low on‑resistance, and low‑voltage drive capability (2.5 V). The device is intended for switching applications and includes a built‑in low‑Vr Schottky diode.
The datasheet lists absolute maximum ratings, electrical characteristics, and typical performance curves. Key parameters include a 30 V drain‑source voltage, 12 V gate‑source rating, 5 A continuous drain current, and a storage temperature range of –55 °C to +150 °C. Detailed capacitance, charge, and timing figures are also provided.
| Drain‑source voltage (Vds) | 30 V |
|---|---|
| Gate‑source voltage (Vgs) | 12 V |
| Continuous drain current (Id) | 5 A |
| Pulsed drain current (Id,pulse) | 6 A |
| Continuous source current (Is) | 0.75 A |
| Channel temperature (Tch) | 150 °C |
| Total power dissipation (Ptot) | 1.0 W |
| Storage temperature range | -55 °C to +150 °C |
| Schottky diode reverse voltage (Vem) | 30 V |
| Schottky diode forward voltage (Vsp) | 1.2 V |
The device is rated for a maximum drain‑source voltage of 30 V.
A low‑voltage drive of 2.5 V is sufficient.
It can be stored from –55 °C up to +150 °C.
The Schottky diode can withstand a reverse voltage of 30 V.