Industrial

The SST6838 is an NPN general purpose transistor produced by ROHM Corporation. This transistor has a small physical size, low power consumption, and high current gain, making it suitable for use in a variety of electronic devices.

NE/SE5537 is an integrated operational amplifier manufactured by Philips Semiconductors. It uses dual power supply and operates over a voltage range of ±5V to ±18V. It features low leakage current, fast acquisition time and low droop rate.

MX98205 is a 4-port 10/100MBps single-chip shared-memory Ethernet switch controller.

The MX27C8000A is a 5V only, 8M-bit, ultraviolet Erasable Programmable Read Only Memory. It features a 1M x 8 organization, static operation, complete TTL compatibility, fast access time, and low standby current.

This is a transistor with two resistors integrated, which can simplify circuit design, reduce board space and reduce the number of components.

The LM4906 is a 1W audio power amplifier designed for mobile phones and other portable communication devices. It can deliver 1W of continuous average power to an 8Ω BTL load with less than 1% distortion from a +5V power supply. The LM4906 is the first National Semiconductor Boomer Power Amplifier that does not require an external PSRR bypass capacitor. It also has an internal selectable gain of either 6dB or 12dB. In addition, no output coupling capacitors or bootstrap capacitors are required, making it ideal for low voltage portable applications. The LM4906 features advanced pop and click circuitry to eliminate noise during turn-on and turn-off transitions. It has a low-power consumption shutdown mode and internal thermal shutdown protection mechanism.

SH8J62 is a low on-resistance P-channel MOSFET from ROHM with built-in G-S protection diode, suitable for switching applications.

This is a document of Motorola TMOS Power MOSFET Transistor Device Data. The device is an N-Channel Enhancement-Mode Silicon Gate MOSFET designed to withstand high energy in avalanche and commutation modes. It also features a drain-to-source diode with a fast recovery time, suitable for low voltage, high-speed switching applications in power supplies, converters, and PWM motor controls. The device is particularly well-suited for bridge circuits where diode speed and commutating safe operating areas are critical and offers additional safety margin against unexpected voltage transients.

This document provides information about the structure, dimensions, features, and application of the ROHM 4V Drive Pch+Pch MOSFET SH8J65. It also includes packaging specifications and absolute maximum ratings.

SH8J66 is a low on-resistance P-channel MOSFET with a built-in G-S protection diode, packaged as SOP8.

This document provides specifications and characteristics of the SMT Power Inductors MSS7341 series. These inductors are ideal for applications requiring high power and high efficiency, such as notebook computers, wireless phones, PDAs, and other handheld products. They offer excellent current handling capability in a rugged, low-cost part. These magnetically shielded power inductors are designed for high-density mounting and are available on tape and reel for auto-insertion. They are offered in 18 inductance values ranging from 3.3 to 100 µH, including values not available in other power inductor series.

This document describes the features and characteristics of the 4V Drive Nch + Nch MOSFET SH8K11 from ROHM, including low on-resistance, built-in G-S protection diode, and small surface mount package (SOP8).

SH8K12 is a 4V drive Nch + Nch MOSFET produced by ROHM. It is mainly used in switching circuits. The device has the characteristics of low on-resistance, built-in G-S protection diode and small package.

This document is a datasheet for the 4V Drive Nch + Nch MOSFET SH8K13 produced by ROHM Co., Ltd. The product features low on-resistance, built-in G-S protection diode, and small surface mount package. It is primarily used for switching applications.