This document describes the features and characteristics of the US5U2 Transistors Rev.B 1/4 4V Drive Nch+SBD MOSFET, including high-speed switching, low on-resistance, 4V drive, and built-in low VF Schottky barrier diode.
The US5U2 combines an N‑channel MOSFET and a built‑in Schottky barrier diode in a TUMTS5 package. It is designed for 4 V drive applications, providing high‑speed switching and low on‑resistance.
Typical specifications include a 30 V drain‑source rating, 20 V gate‑source rating, and a continuous drain current of 41.4 A. The device is supplied in a tape‑and‑reel format (3000 pieces per reel) and is intended for use in switching circuits, with a built‑in diode for reverse‑current protection.
| Drain‑source voltage (VDS) | 30 V |
|---|---|
| Gate‑source voltage (VGS) | 20 V |
| Continuous drain current (ID) | 41.4 A |
| Pulsed drain current (ID,pulse) | 5.6 A |
| Power dissipation per element | 0.7 W |
| Maximum junction temperature | 150 °C |
| Reverse voltage (VR) | 20 V |
| Forward current (IF) | 0.5 A |
| Total power dissipation (PD,total) | 1.0 W |
| Storage temperature range | -55 °C to +150 °C |
The US5U2 can tolerate up to 30 V drain‑source voltage.
It is rated for a continuous drain current of 41.4 A.
The diode’s forward voltage is 1.2 V at 0.6 A.
The device can be stored from –55 °C to +150 °C.