US6K1 is a N-channel MOSFET produced by ROHM company. It has the characteristics of low voltage drive, small package and low on-resistance.
The US6K1 is a low‑on‑resistance, space‑saving surface‑mount N‑channel MOSFET designed for 2.5 V gate drive applications. It is offered in a TUMT6 package and is suitable for switching circuits.
The document lists absolute maximum ratings, typical electrical parameters, and packaging information, along with application notes and safety warnings for proper use in electronic equipment.
| Drain‑source voltage (VDS) | 30 V |
|---|---|
| Gate‑source voltage (VGS) | 12 V |
| Continuous drain current (ID) | 1.56 A |
| Pulsed drain current (ID,pulse) | 6 A |
| Total power dissipation (PD) | 10 W |
The maximum drain‑source voltage is 30 V.
The device is designed for a low 2.5 V gate‑drive voltage.