Industrial

RZF030P01 is a 1.5V drive Pch MOSFET produced by ROHM. It features low on-resistance, high power package, low voltage drive, and is suitable for switching applications.

This is a datasheet for ROHM's 1.2V drive Pch MOSFET RZM002P02.

This document describes the features and characteristics of ROHM's 1.5V Drive Pch MOSFET RZQ050P01, including low on-resistance, high power package, and low voltage drive.

NTE56051 & NTE56052 TRIAC, 8A Low Logic Level is a Nexperia product, a glass passivated, Low Logic Level TRIAC in a TO220 type package designed for use in general purpose bidirectional switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits, and other low power gate trigger circuits.

This datasheet provides detailed information on 1.5V Drive Pch MOSFET RZR020P01, including structure, features, dimensions, applications, packaging specifications, absolute maximum ratings, thermal resistance and electrical characteristics.

RZR025P01 is a 1.5V drive P-channel MOSFET with low on-resistance, built-in G-S protection diode, small surface mount package and low voltage drive.

This document describes the features and characteristics of a 1.5V drive Pch MOSFET product, including low on-resistance, high power package, and low voltage drive. The product is suitable for switching applications.

This document describes the features and characteristics of the 4V drive Nch MOSFET RSD080N06 produced by ROHM, including low on-resistance, 4V drive, and high power package. This product is suitable for switching applications.

This document describes the features and dimensions of the 4V Drive Pch MOSFET RSC002P03 produced by ROHM. The product has low on-resistance and low-voltage drive characteristics, making it suitable for switching applications.

NM24C16U/NM24C17U are 16K (16,384) bit serial interface CMOS EEPROMs (Electrically Erasable Programmable Read- Only Memory), fully conform to the Standard I2C™ 2-wire protocol, support Clock (SCL) and Data I/O (SDA) pins, and offer low voltage and low power options

This document is a datasheet for the ROHM RU1C002ZP 1.2V Drive Pch MOSFET. The product features low on-resistance and low voltage drive, making it suitable for switching applications.

RU1C002UN is a Nch MOSFET launched by ROHM. It features low on-resistance and low voltage drive(1.2V drive). It is suitable for switching applications.

NJG1521PE1 is an antenna switch IC for a digital cellular phone of 800MHz and 1.5GHz band. It features low voltage operation, low current consumption, and low insertion loss. It is packaged in an ultra-small and thin FFP24-E1 package.

This data sheet is for the characteristics of R6004CND, including electrical characteristics, absolute maximum ratings and packaging specifications.

NE650R479A is a 0.4 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 0.4 watt of output power (CW) with high linear gain, high efficiency, excellent distortion and is suitable as a driver amplifier for our NE6500379A etc. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.