Rohm US6M2 N‑Channel/P‑Channel MOSFET Datasheet

About this manual

This document describes the US6M2 MOSFET, which combines an N‑channel and a P‑channel device in a TUMT6 package. Key features include high‑speed switching, low on‑resistance, a low 2.5 V drive requirement and an integrated gate‑source protection diode.

The datasheet lists absolute maximum ratings, detailed electrical parameters for both the N‑channel and P‑channel transistors, body‑diode characteristics, and packaging information. An appendix notes usage restrictions for safety‑critical applications and export‑control considerations.

What's inside

• Structure
• Dimensions
• Features
• Applications
• Packaging specifications
• Absolute maximum ratings
• Electrical characteristics (N‑channel)
• Electrical characteristics (P‑channel)
• Body diode characteristics
• Appendix

Specifications

Frequently asked questions

What gate‑source voltage is required to turn the device on?

The MOSFET is designed for low‑voltage drive, requiring only 2.5 V on the gate.

What type of package does the US6M2 use?

Both the N‑channel and P‑channel transistors are housed in a TUMT6 package.

Can the US6M2 be used in safety‑critical equipment such as medical devices?

The document advises consulting Rohm sales before using the device in equipment where failure could endanger human life.