US6K4 is a 1.8V drive Nch+Nch MOSFET produced by Toshiba, which has the characteristics of high-speed switching, low on-resistance and is suitable for switching applications.
The US6K4 is a dual N‑channel MOSFET packaged in a TUMT6 (6‑pin) ceramic package. It offers high‑speed switching, low on‑resistance, and a 1.8 V gate drive suitable for low‑voltage applications.
Typical applications include switching circuits. The document also includes absolute maximum ratings, detailed electrical parameters, and packaging information, along with a notice about ESD protection and usage guidelines.
| Drain‑source voltage (VDS) | 20 V |
|---|---|
| Gate‑source voltage (VGS) | +10 V |
| Continuous drain current (ID) | 1.56 A |
| Pulsed drain current (ID,pulse) | 3.0 A |
| Continuous source current (IS) | 0.6 A |
| Total power dissipation | 2 W total / 0.7 W per element |
| Channel temperature (TC) | 150 °C |
| Storage temperature range | -55 °C to +150 °C |
| Gate threshold voltage (Vth) | 0.3 – 1.0 V |
| Input capacitance (Ciss) | 110 pF |
| Output capacitance (Coss) | 18 pF |
| Reverse transfer capacitance (Crrs) | 15 pF |
| Total gate charge (Qg) | 18 nC (typ) |
The US6K4 can withstand up to 20 V between drain and source.
The device is designed for a 1.8 V gate drive.
Yes, the product may cause chip aging under high‑electrified conditions, so an ESD protection circuit should be designed.
It is supplied in a TUMT6 ceramic package with a 6‑pin tape‑and‑reel format.