This page provides manuals, user guides, handbooks, specifications, and maintenance instructions for Industrial. View online or download for free. Showing page 2202.
BLF522 UHF power MOS transistor is a N-channel enhancement mode vertical D-MOS transistor designed by Philips Semiconductors for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 6-lead SOT171 flange envelope, with a ceramic cap. All leads are isolated from the flange.
BLF521 is a UHF power MOS transistor with high power gain, easy power control, good thermal stability, withstands full load mismatch, designed for broadband operation.
BLF404 is a UHF power MOS transistor produced by Philips company, which has the characteristics of high power gain, easy power control, gold metallization, good thermal stability, can withstand full load mismatch, and is designed for broadband operation.
The BLF378 is a VHF push-pull power MOS transistor produced by Philips. It features high power gain, easy power control, good thermal stability and excellent reliability.
BLF368 is a VHF push-pull power MOS transistor manufactured by Philips Semiconductors. It features high power gain, easy power control, good thermal stability and is packaged in a 4-lead SOT262A1 balanced flange package with two ceramic caps.
BLF348 is a VHF linear push-pull power MOS transistor from Philips Semiconductors, which has the characteristics of high power gain, easy power control, good thermal stability, etc.
BLF346 is a VHF power MOS transistor with high power gain, easy power control, good thermal stability, and excellent reliability. It is suitable for linear amplifier applications in television transmitters and transposers.
BLF278 is a VHF push-pull power MOS transistor produced by Philips Semiconductors. It features high power gain, easy power control, good thermal stability and excellent reliability. It is mainly used in VHF frequency range broadcast transmitters.
BLF276 is a VHF power MOS transistor with features of high power gain, easy power control, and good thermal stability. It is designed for large signal amplifier applications in the VHF frequency range, delivering an output power of 100W in class-B operation at a supply voltage of 50V.
BLF248 is a VHF push-pull power MOS transistor with features including high power gain, easy power control, and good thermal stability. It is designed for large signal amplifier applications in the VHF frequency range.
The BLF247B is a VHF push-pull power MOS transistor from Philips Semiconductors. It features high power gain, easy power control, good thermal stability and can withstand full load mismatch. It is suitable for large signal applications in the VHF frequency range.
BLF246B is a VHF push-pull power MOS transistor with high power gain, easy power control, good thermal stability, and excellent reliability. It is suitable for large signal applications in the VHF frequency range.
The BLF246 is a power MOS transistor developed by Philips. It has high power gain, low noise figure, easy power control, good thermal stability and full load mismatch capability. It is applied to large signal amplifier applications in the VHF frequency range.
BLF245B is a VHF push-pull power MOS transistor produced by Philips Semiconductors. It features high power gain, easy power control, good thermal stability and excellent reliability.
