Industrial

BUK452-100A/B is a N-channel enhancement mode field-effect power transistor in a plastic envelope. It is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.

BUK451-100A/B is an N-channel enhancement mode field-effect power transistor in a plastic envelope, produced by Philips Semiconductors. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.

BUK446-800A/B is an N-channel enhancement mode power MOS transistor designed for applications such as switched mode power supplies, motor control, welding, DC/DC and AC/DC converters. It features a drain-source voltage of 800V, a drain current of 2.0A, a total power dissipation of 30W, and a drain-source on-state resistance of 3-4Ω.

BUK446-1000B is an N-channel enhancement mode power field-effect transistor suitable for switched mode power supplies, motor control, welding, DC/DC and AC/DC converters, and general-purpose switching applications. It has a drain-source voltage of 1000V, a drain current of 1.5A, and an on-state resistance of 5Ω.

BUK445-200A/B is a power N-channel enhancement mode field-effect transistor suitable for applications such as switched mode power supplies, motor control, welding, DC/DC and AC/DC converters.

BUK444-800A/B is a power MOS transistor suitable for applications such as switched mode power supplies, motor control, welding, DC/DC and AC/DC converters. It features a drain-source voltage of 800V, a drain current (DC) of 1.4A, and a total power dissipation of 30W.

This document describes the features and characteristics of the Philips Semiconductors PowerMOS transistor BUK444-800A/B. It is a N-channel enhancement mode field-effect power transistor with a drain-source voltage of 800V and a drain current of 1.4A. The device is intended for use in switched mode power supplies, motor control, welding, DC/DC and AC/DC converters, and general purpose switching resistance applications.

BUK444-60H is a N-channel enhancement mode field-effect power transistor produced by Philips Semiconductors. The package is a plastic full-pack. The device is intended for use in automotive applications, switched mode power supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.

BUK444-200A/B is a power field-effect transistor used in switched mode power supplies, motor control, welding, DC/DC and AC/DC converters, and general purpose switching resistance applications.

BUK444-200A/B is a N-channel enhancement mode field-effect power transistor produced by Philips Semiconductors. It is used in switched mode power supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and general purpose switching applications.

The BUK438W-800A/B is a N-channel enhancement mode field-effect power transistor produced by Philips Semiconductors. Its maximum voltage is 800V and maximum current is 7.6A.

The BUK436W-200A/B is an N-channel enhancement mode power field-effect transistor suitable for applications such as switched mode power supplies, motor control, welding, DC/DC and AC/DC converters. It features a drain-source voltage of 200V, a drain current of 19A, and a drain-source on-state resistance of 0.16Ω.

BUK436W-1000B is a N-channel enhancement mode field-effect power transistor produced by Philips Semiconductors. The package is SOT429 (TO247), the working voltage is 1000V, the maximum current is 3.1A, and the maximum power consumption is 125W.