Industrial

BLF1822-10 is a UHF power LDMOS transistor with the following features: output power of 10W, gain of 18.5dB at 900MHz, 13.5dB at 2200MHz, efficiency of 39% at 900MHz, 34% at 2200MHz, dim of -31dBc at 900MHz, -28dBc at 2200MHz, etc.

This document describes the features and characteristics of the BLF1820-90 UHF power LDMOS transistor, including output power, gain, efficiency, suppression, etc. It is suitable for GSM, EDGE, CDMA base stations, and multicarrier applications.

BLF1820-70 is a 70W LDMOS power transistor from Philips, designed for GSM, EDGE and CDMA base stations and multicarrier applications in the 1800 to 2000 MHz frequency range.

BLF177 is a high power MOS transistor produced by Philips Semiconductors. It has high power gain, low intermodulation distortion, easy power control, good thermal stability and full load matching characteristics.

BLF175 is a power MOS transistor produced by Philips Corporation. It has the characteristics of high power gain, low intermodulation distortion, easy power control, good thermal stability, etc.

The BLF147 VHF power MOS transistor is a silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range.

BLF1049 is a LDMOS power transistor manufactured by Philips Semiconductors. It is used in GSM, EDGE and CDMA base stations and multi-carrier applications in the 800 to 1000 MHz frequency range. It has a maximum output power of 125W, a gain of 16.5dB, an efficiency of 54% and good anti-interference performance.

The BLF1048 is a UHF power LDMOS transistor with high power gain, easy power control, and excellent ruggedness. It is designed for communication transmitter applications in the UHF frequency range.

BLF1047 is a UHF power LDMOS transistor produced by Philips Semiconductors. It has the characteristics of high power gain, easy power control, excellent ruggedness, and is designed for broadband operation (HF to 1 GHz). It is suitable for communication transmitter applications in the UHF frequency range.

BLF1043 UHF power LDMOS transistor is a high power gain, easy power control, rugged and durable transistor, designed for broadband operation (HF to 1 GHz).

This document describes the features and characteristics of Axial Lead and Cartridge fuses, including electrical characteristics, certifications, and interrupting rating.

BLF0810-90 and BLF0810S-90 are LDMOS transistors produced by Philips Semiconductors. They have high power gain, easy power control, excellent ruggedness, bottom source eliminates DC isolators, reducing common mode inductance, and are designed for broadband operation (750MHz to 1GHz).

BLF0810-180 and BLF0810S-180 are base station LDMOS transistors designed for frequencies from 800 to 1000 MHz. They feature excellent thermal stability, easy power control, high power gain, and excellent ruggedness.