BLF248 is a VHF push-pull power MOS transistor with features including high power gain, easy power control, and good thermal stability. It is designed for large signal amplifier applications in the VHF frequency range.
The Philips BLF248 is a dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. It features high power gain, easy power control, and good thermal stability, with gold metallization ensuring excellent reliability. The device is encapsulated in a 4-lead SOT262 A1 balanced flange envelope with two ceramic caps.
| Storage temperature | -65 to 150 °C |
|---|---|
| Operating frequency | 225 MHz |
The BLF248 is designed for class-AB operation in a push-pull common source test circuit.
The typical power gain is greater than 10 dB at 225 MHz with a supply voltage of 28 V.
The transistor is encapsulated in a 4-lead SOT262 A1 balanced flange envelope.