BLF346 is a VHF power MOS transistor with high power gain, easy power control, good thermal stability, and excellent reliability. It is suitable for linear amplifier applications in television transmitters and transposers.
The document is a product specification sheet for the BLF346, an N-channel enhancement mode vertical D-MOS transistor designed for high-power gain and easy control. It features gold metallization for reliability and is packaged in a 6-lead SOT119 flange with a ceramic cap.
| Drain-source voltage (Max) | -65 V |
|---|---|
| Gate-source voltage (Max) | +20 V |
| DC drain current (Max) | 13 A |
| Total power dissipation (Max) | 130 W |
| Junction temperature (Max) | 200 °C |
| Drain-source breakdown voltage | 65 V |
It is a Silicon N-channel enhancement mode vertical D-MOS transistor.
The maximum total power dissipation is 130 W when the temperature is 25 °C.
The maximum gate-source voltage is +20 V.
The maximum DC drain current is 13 A.