BLF278 is a VHF push-pull power MOS transistor produced by Philips Semiconductors. It features high power gain, easy power control, good thermal stability and excellent reliability. It is mainly used in VHF frequency range broadcast transmitters.
The document is a product specification for the BLF278, a VHF push-pull power MOS transistor manufactured by Philips Semiconductors. It describes the device as a dual silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in an SOT262A1 balanced flange package with two ceramic caps.
The datasheet provides comprehensive technical data including quick reference performance figures for CW class-B, class-C, and class-AB operations. It details limiting values such as maximum drain-source voltage (110 V) and total power dissipation (500 W), along with thermal characteristics and electrical parameters like transconductance and capacitance.
| Drain-source voltage (VDS) | 110 V |
|---|---|
| Gate-source voltage (VES) | +20 V |
| Drain current (DC) | 18 A |
| Total power dissipation | 500 W |
| Junction temperature (Tj) | 200 °C |
| Forward transconductance (Gfs) | 4.5 to 6.2 S |
| Drain-source on-state resistance (RDSon) | 0.2 to 0.3 Ohm |
| Input capacitance (Ciss) | 480 pF |
The maximum total power dissipation for both sections equally loaded at a mounting base temperature of 25 °C is 500 W.
The transistor is encapsulated in a 4-lead, SOT262A1 balanced flange package with two ceramic caps.