Industrial

BLF861A is a UHF power LDMOS transistor produced by Philips Semiconductors. It features high power gain, easy power control, excellent ruggedness, designed to withstand abrupt load mismatch errors, source on underside eliminates DC isolators, reducing common mode inductance, designed for broadband operation (UHF band), and internal input and output matching for high gain and optimum broadband operation.

This is a high power gain, easy power control, rugged LDMOS transistor, suitable for UHF frequency band communication transmitter applications.

The document describes a 50W LDMOS power transistor for base station applications in the frequency range of 3400 MHz to 3800 MHz. The product features a channel bandwidth of 1.23 MHz, a PAR of 9.7 dB, 23% drain efficiency, and excellent thermal stability and ruggedness.

The BLF6G10LS-200R is a 200W LDMOS power transistor from NXP, suitable for base station applications in the frequency range of 800MHz to 1000MHz.

The BLF6G10LS-200 is a 200 W LDMOS power transistor from NXP Semiconductors for base station applications at frequencies from 800 MHz to 1000 MHz.

The BLF647 is a high power LDMOS transistor produced by Philips. It has high power gain, easy power control, excellent ruggedness, and a source on the underside that eliminates DC isolators and reduces common-mode inductance. It is designed for broadband operation (HF to 800 MHz).

BLF548 is a UHF push-pull power MOS transistor produced by Philips company, which features high power gain, easy power control, good thermal stability, gold metallization ensures excellent reliability and broadband operation.

BLF547 is a UHF push-pull power MOS transistor produced by Philips. It has high power gain, easy power control, good thermal stability and excellent reliability.

The BLF546 is a UHF push-pull power MOS transistor with high power gain, easy power control, good thermal stability, and designed for broadband operation.

The BLF545 is a UHF push-pull power MOS transistor manufactured by Philips Semiconductors. It features high power gain, easy power control, good thermal stability, gold metallization that ensures excellent reliability, and is designed for broadband operation.

BLF544 is a UHF power MOS transistor with high power gain, easy power control, good thermal stability, and excellent reliability. It is designed for broadband operation and is suitable for communication transmitters in the UHF frequency range.

This is a BLF542 UHF power MOS transistor produced by Philips, which has the characteristics of high power gain, easy power control, gold metallization, good thermal stability, and can withstand full load mismatch