Philips BLF276 VHF Power MOS Transistor Datasheet

BLF276 is a VHF power MOS transistor with features of high power gain, easy power control, and good thermal stability. It is designed for large signal amplifier applications in the VHF frequency range, delivering an output power of 100W in class-B operation at a supply voltage of 50V.


Philips BLF276 VHF Power MOS Transistor Datasheet - cover page
Brand
Philips
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
13
File format
PDF
File size
87 KB
Published
06 July, 2012
Updated
28 September, 2023
MD5 checksum
0ED59DDC4E36677CF62E55DD15C8613F

About this manual

This document is a product specification datasheet for the Philips BLF276, a silicon N-channel enhancement-mode vertical D-MOS transistor. It is designed for large signal amplifier applications in the VHF frequency range, delivering an output power of 100 W in class-B operation at a supply voltage of 50 V. The device is encapsulated in a 6-lead, SOT119 pill-package envelope with a ceramic cap.

What's inside

  • Features
  • Description
  • Pinning
  • Quick Reference Data
  • Limiting Values
  • Thermal Resistance
  • Characteristics
  • Application Information
  • Package Outline
  • Definitions

Specifications

Output Power (CW, class-B)100 W
Supply Voltage50 V
Package TypeSOT119D
Frequency RangeVHF

Frequently asked questions

What is the operating class for the BLF276?

The transistor is designed for large signal amplifier applications in the VHF frequency range and delivers 100 W in class-B operation.

Is the BLF276 suitable for life support applications?

No, these products are not designed for use in life support appliances, devices, or systems.

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