BLF522 UHF power MOS transistor is a N-channel enhancement mode vertical D-MOS transistor designed by Philips Semiconductors for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 6-lead SOT171 flange envelope, with a ceramic cap. All leads are isolated from the flange.
The document is a product specification sheet for the BLF522, an N-channel enhancement-mode vertical D-MOS transistor. It is encapsulated in a 6-lead SOT171 flange envelope with a ceramic cap and is designed for broadband operation in the UHF frequency range.
| Supply Voltage (VDS) | 12.5 V |
|---|---|
| Efficiency (ND) | >50 % |
| Drain-Source Voltage (VDS) | -40 V |
| Gate-Source Voltage (VGS) | =20 V |
| DC Drain Current (ID) | -1.8 A |
| Total Power Dissipation (PD) | -20 W |
It is designed for communications transmitter applications in the UHF frequency range.