The BLF247B is a VHF push-pull power MOS transistor from Philips Semiconductors. It features high power gain, easy power control, good thermal stability and can withstand full load mismatch. It is suitable for large signal applications in the VHF frequency range.
The Philips BLF247B is a VHF push-pull power MOS transistor designed for large signal applications in the VHF frequency range. It features high power gain, easy power control, and good thermal stability, capable of withstanding full load mismatch. The device is an N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead SOT262A1 balanced flange type package with two ceramic caps.
The document details the electrical characteristics, limiting values, and thermal characteristics of the transistor. It includes typical performance curves for RF performance in a push-pull, common source, class-B test circuit, showing power gain and efficiency as functions of load power. Additionally, it provides a list of components for a reference circuit design.
| Operating junction temperature | +200 °C |
|---|
The maximum operating junction temperature is +200 °C.
The thermal resistance from the mounting base to the heatsink is 0.15 K/W.