BLF348 is a VHF linear push-pull power MOS transistor from Philips Semiconductors, which has the characteristics of high power gain, easy power control, good thermal stability, etc.
The document is a product specification datasheet for the BLF348, a dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor. It is designed specifically for broadcast transmitter applications in the VHF frequency range and features high power gain and excellent thermal stability.
The device is encapsulated in a 4-lead SOT262A1 balanced flange envelope with two ceramic caps. The datasheet provides detailed electrical characteristics, limiting values, thermal resistance data, application information for Class-A operation, component lists for test circuits, and package outline dimensions.
| Total power dissipation (Ptot) | - 500 W |
|---|---|
| Junction temperature (Tj) | - 200 °C |
The device uses a 4-lead SOT262A1 balanced flange envelope with two ceramic caps.
Yes, the product contains beryllium oxide and must not be thrown out with general waste.