BLF521 is a UHF power MOS transistor with high power gain, easy power control, good thermal stability, withstands full load mismatch, designed for broadband operation.
The Philips BLF521 is a Silicon N-channel enhancement-mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. It features high power gain, easy power control, and gold metallization for good thermal stability. The device is encapsulated in a 4-lead, SOT172D studless envelope with a ceramic cap, where all leads are isolated from the mounting base.
| Storage temperature | -65 to 150 °C |
|---|---|
| Junction temperature | 200 °C |
The device is encapsulated in a 4-lead, SOT172D studless envelope with a ceramic cap.
The maximum total power dissipation is 10 W when the temperature is 25 °C.
The maximum drain-source voltage rating is 40 V.
The maximum DC drain current is 1 A.