BLF277 is a VHF power MOS transistor with high power gain, easy power control, excellent reliability and thermal stability.
The Philips BLF277 is a Silicon N-channel enhancement mode vertical D-MOS transistor intended for large signal amplifier applications in the VHF frequency range. It features high power gain, easy power control, and gold metallization to ensure excellent reliability and thermal stability.
The device is encapsulated in a 6-lead SOT119 flange envelope with a ceramic cap, where all leads are isolated from the flange. Key electrical characteristics include a drain-source breakdown voltage of 110 V, a maximum DC drain current of 16 A, and typical power gain exceeding 14 dB at 175 MHz in Class-B operation.
| DC drain current (ID) | 16 A |
|---|---|
| Total power dissipation (PD) | 220 W |
| Power gain (typical) | > 14 dB |
| Package type | SOT119 flange envelope |
It is a Silicon N-channel enhancement mode vertical D-MOS transistor.
The device operates at 175 MHz with a supply voltage of 50 V and a drain current of 0.1 A.
The gate-source input must be protected against static charge during transport and handling.