Industrial

This document describes the features of the NPN 5 GHz wideband transistors BFG590 and BFG590/X, including high power gain, low noise figure, high transition frequency, and gold metallization for excellent reliability. They are suitable for use in MATV/CATV amplifiers and RF communications subscriber equipment in the GHz range, ideally suitable for use in class-A, (A)B and C amplifiers with either pulsed or continuous drive.

Philips BFG541 NPN 9 GHz wideband transistor, features high power gain, low noise figure, high transition frequency, gold metallization ensures excellent reliability

The BFG540W is a NPN 9 GHz wideband transistor with high power gain, low noise figure and high transition frequency. It is suitable for RF front end wideband applications such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fiber-optic systems.

This document describes the features and characteristics of the BFG540 series wideband transistors, including high power gain, low noise figure, high transition frequency, and gold metallization for excellent reliability. These transistors are intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones, radar detectors, satellite TV tuners, MATV/CATV amplifiers, and repeater amplifiers in fiber-optical systems.

This data sheet introduces the features and characteristics of the BFG520/X/XR model NPN 9GHz wideband transistor products, including high power gain, low noise figure, and high transition frequency. The product is suitable for applications in the GHz range of the RF front end, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV) and repeater amplifiers in fiber-optic systems.

This document describes the features and characteristics of the BFG520 series NPN 9 GHz wideband transistors, including high power gain, low noise figure, and high transition frequency. They are intended for applications in the RF frontend in the GHz range, such as analog and digital cellular telephones, cordless telephones, radar detectors, pagers, satellite TV tuners, and repeater amplifiers in fibre-optic systems.

BFG505W is a NPN 9GHz wideband transistor produced by Philips Semiconductors. It features high power gain, low noise figure and high transition frequency. It is mainly used for RF front end applications such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV).

This document describes the features and characteristics of BFG505W and BFG505W/X NPN 9 GHz wideband transistors, including high power gain, low noise figure, and high transition frequency.

This document is the product specification of BFG480W NPN wideband transistor. The product has high power gain, high efficiency, low noise figure, high transition frequency, low feedback capacitance, etc. It is suitable for high linearity system requirements RF front end (CDMA), common emitter class AB driver and other applications.