Industrial

This document describes the features of the BFG425W NPN 25 GHz wideband transistor, including very high power gain, low noise figure, high transition frequency, low feedback capacitance, etc. The product is suitable for RF front end, wideband applications, radar detectors, pagers, satellite television tuners, and high frequency oscillators.

BFG410W is a NPN 22 GHz wideband transistor from Philips Semiconductors. It features very high power gain, low noise figure, high transition frequency and low feedback capacitance. It is widely used in RF front end, wideband applications, radar detectors, pagers, satellite television tuners and high frequency oscillators.

BFG403W is an NPN 17 GHz wideband transistor with low current, very high power gain, low noise figure, high transition frequency and very low feedback capacitance. It is suitable for applications such as pager front ends, RF front ends, etc.

This document describes a BFG35 NPN 4 GHz wideband transistor, intended for wideband amplifier applications. It features high output voltage capabilities.

This document describes an NPN silicon planar epitaxial transistor with features like high power gain, low noise figure, and high transition frequency. The product is intended for RF front end applications in the GHz range, such as analog and digital cellular telephones, cordless telephones, radar detectors, pagers, and Satellite Antenna TeleVision (SATV) tuners.

BFG31 is a PNP type 5 GHz wideband transistor, features high output voltage capability, high gain bandwidth product and good thermal stability. It is mounted in a plastic SOT223 envelope and intended for wideband amplifier applications. Its NPN complement is the BFG97.

The BFG 235 is a NPN Silicon RF Transistor produced by Texas Instruments. It is used for low-distortion broadband output amplifier stages in antenna and telecommunication systems up to 2 GHz at collector currents from 120 mA to 250 mA. It is also suitable for DECT and PCN systems power amplifiers. The BFG 235 has an integrated emitter ballast resistor and a fT of 5.5 GHz.

This document is the product specification of BFG21W UHF power transistor. It introduces the features and characteristics of the product, including high power gain, high efficiency, 1.9 GHz operating area, linear and nonlinear operation. The product is used in the common emitter class-AB output stage of hand held radio equipment at 1.9 GHz, such as DECT, PHS, etc., and as a driver for DCS1800, 1900.

BFG198 is a NPN 8GHz wideband transistor manufactured by PHILIPS company with high gain and excellent output voltage capability.

BFG196 is an NPN silicon RF transistor designed for low noise, low distortion broadband amplifiers in antenna and telecommunication systems up to 1.5 GHz. It can operate at collector currents ranging from 20 mA to 80 mA. It is also suitable for power amplifiers in DECT and PCN systems. The transistor has a cutoff frequency of 7.5 GHz and a gain of 1.5 dB at 900 GHz. It is an electrostatic discharge sensitive device and requires careful handling.

BFG 194 is a RF transistor, mainly used in low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA

BFG193 is a NPN silicon RF transistor, suitable for low noise, high gain amplifiers with frequencies up to 2 GHz.

BFG 19S is a NPN silicon RF transistor, suitable for low noise, low distortion broadband amplifiers in antenna and telecommunication systems up to 1.5 GHz at collector currents from 10 mA to 70 mA.

bfg16a is a npn 2ghz wideband transistor produced by philips. it has high power gain, good thermal stability and excellent reliability. the transistor is mainly used in wideband amplifiers, aerial amplifiers and vertical amplifiers in high speed oscilloscopes.