Industrial

BFG 135A is a RF transistor produced by Texas Instruments (TI). It has an integrated emitter ballast resistor and a maximum current of 150mA. Its maximum power is 1W and its maximum frequency is 2GHz.

BFG135 is a NPN silicon planar epitaxial transistor produced by Philips Corporation. It is packaged in SOT223 and is mainly used for wideband amplifier applications. Its small emitter structures, with integrated emitter-ballasting resistors, ensure high output voltage capabilities at a low distortion level. The distribution of the active areas across the surface of the device gives an excellent temperature profile.

This document describes the features and characteristics of Philips Semiconductors' BFG11 and BFG11/X models, including high power gain, high efficiency, and small size discrete power amplifiers. The product is suitable for common emitter class-AB operation in hand-held radio equipment at 1.9 GHz.

This document describes the features and characteristics of the BFG11W/X NPN 2 GHz power transistor, including high power gain, high efficiency, and small size discrete power amplifier. It is suitable for common emitter class-AB operation at 1.9 GHz in handheld radio equipment such as DECT, PHS, and as a driver for DCS 1800.

BFG11W/X is a NPN 2GHz power transistor produced by Philips. It has the advantages of high power gain, high efficiency, small size and so on. It is mainly used in 1.9GHz frequency band common RF scenarios such as DECT and PHS.

This data sheet provides detailed information on Philips Semiconductors BFG11; BFG11/X NPN 2 GHz RF power transistor, including features, applications, pin definitions, performance parameters and more.

This document describes the features and characteristics of the BFG10W/X UHF power transistor, including high efficiency, small size, and gold metallization for excellent reliability. The product is suitable for common emitter class-AB operation in hand-held radio equipment up to 1.9 GHz.

BFG10 is a NPN 2 GHz RF power transistor produced by Philips Semiconductors. It has the characteristics of high power gain, high efficiency, and small size. It is mainly used in hand-held radio equipment.

BFQ 82 is an NPN silicon RF transistor suitable for low-noise, high-gain amplifiers up to 2 GHz. It features linear broadband applications and a hermetically sealed ceramic package.

BFQ 81 is an NPN Silicon RF transistor suitable for low-noise amplifiers up to 2GHz and broadband analog and digital applications. It operates at collector currents ranging from 0.5mA to 20mA.