This page provides manuals, user guides, handbooks, specifications, and maintenance instructions for Industrial. View online or download for free. Showing page 2156.
BFQ68 is a NPN transistor with a wideband of 4 GHz and very high output voltage capabilities. It is primarily intended for final stages in MATV system amplifiers and is also suitable for use in low power band IV and V equipment.
BFQ67T is an NPN 8 GHz wideband transistor from Philips Semiconductors. It features high power gain, low noise figure, high transition frequency and gold metallization package. It is used in wideband applications such as satellite TV tuners and RF portable communications equipment up to 2 GHz.
BFQ67/BFQ67R/BFQ67W is a Silicon NPN Planar RF transistor produced by Vishay Telefunken. It has low noise, small feedback capacitance, and high transition frequency.
The BFQ621 is a Philips NPN type 7GHz wideband transistor with high power gain, high output voltage and high maximum junction temperature. It is mainly used in MATV and microwave amplifiers.
BFQ591 is a NPN type 7 GHz wideband transistor manufactured by Philips. It has high power gain, low noise figure, high transition frequency and excellent reliability. It is intended for applications in the GHz range, such as MATV or CATV amplifiers and RF communications subscribers equipment.
BFQ540 is an NPN wideband dual transistor from Philips Semiconductors, with high gain, high output voltage, low noise, gold metallization ensures excellent reliability, low thermal resistance. Applications for VHF, UHF and CATV amplifiers.
BFQ34 is a NPN 4 GHz wideband transistor primarily intended for driver and final stages in MATV system amplifiers. It is also suitable for use in low power band IV and V equipment. The transistor features high output voltage capabilities.
BFQ31A is a SOT23 package NPN silicon planar VHF/UHF transistor with a maximum collector-emitter reverse voltage of 30V, a maximum collector-base reverse voltage of 15V, a maximum emitter-base reverse voltage of 3V, a maximum collector current of 100mA, a maximum base current of 50mA, and a maximum power dissipation of 330mW. The operating temperature range is -55℃ to +150℃.
BFQ 29P is a NPN silicon RF transistor, with a maximum collector-emitter voltage of 15V, a maximum emitter-base voltage of 3V, a maximum collector current of 30mA, a maximum collector-base voltage of 20V, a maximum base current of 4mA, and a working temperature range of -65...+150℃. The package is SOT-23.
