Industrial

This document describes the features and characteristics of the 2PD602A NPN general purpose transistor, including high current and low voltage, suitable for general switching and amplification applications.

2PD601AW is a general purpose NPN type transistor produced by PHILIPS. It features high collector current (max. 100mA) and low collector-emitter saturation voltage (max. 500mV). It is suitable for general switching and amplification applications. The product is packaged in SC-70 (SOT323) plastic package and the PNP complementary model is 2PB709AW.

2PD601A is a NPN general purpose transistor produced by Philips Semiconductors. This transistor has the characteristics of low current (maximum 100mA) and low voltage (maximum 50V). It is mainly used for general purpose switching and amplification.

The product is a low-voltage, high-current NPN type transistor produced by PHILIPS. Its package form is SOT89, and it is used in DC-DC conversion, MOSFET gate driving, motor control, charging circuits, power switches, etc.

2PD1820A is an NPN general purpose transistor with features of high current (max. 500 mA), low voltage (max. 50 V) and low collector-emitter saturation voltage (max. 600 mV). The transistor is suitable for general purpose switching and amplification applications, especially for portable equipment.

BCV 71, BCV 72 are NPN surface mount Si-Epitaxial PlanarTransistors in a SOT-23 plastic case with a power dissipation of 250 mW.

BCV65 is a NPN/PNP general purpose transistor featuring low current (max. 100 mA) and low voltage (max. 30 V). This transistor is widely used in general switching and amplification.

BCV64B is a PNP double transistor produced by Philips Semiconductors. Its characteristics are low current and low voltage, with maximum values of 100mA and 30V respectively. The product is mainly used for switching and amplification.

BCV63; BCV63B are NPN double transistors from Philips Semiconductors with low current (max. 100 mA) and low voltage (max. 30 and 6 V). It is suitable for general purpose switching and amplification as well as Schmitt trigger applications.

This document describes the features and characteristics of the BCV62 PNP Silicon Double Transistor. It can be used as a current mirror and has good thermal coupling and VBE matching, high current gain, and low collector-emitter saturation voltage.

BCV61 is an NPN Silicon Double Transistor, To be used as a current mirror, with Good thermal coupling and VBE matching, High current gain and Low collector-emitter saturation voltage.

BCV29, BCV49 are NPN silicon Darlington transistors with high collector current and high current gain.

BCV28 and BCV48 are PNP silicon Darlington transistors designed for general AF applications. They have high collector current and high current gain. Complementary types BCV29 and BCV49 (NPN) are also available.

BCV27, BCV47 are NPN silicon planar Darlington transistors, SOT-23 package, power dissipation 250mW, maximum collector-emitter voltage 30V or 60V, maximum collector-base voltage 40V or 80V, maximum emitter-base voltage 10V.