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BCW67 and BCW68 are PNP silicon AF transistors for general AF applications. They have high current gain and low collector-emitter saturation voltage. The complementary types are BCW65 and BCW66 (NPN).

BCW 67 BCW 68 are bipolar junction transistors with high current gain and low collector-emitter saturation voltage. They are suitable for general audio applications.

The document describes the features of BCW 67 and BCW 68 general purpose PNP surface mount transistors. These transistors have a power dissipation of 250 mW and are suitable for mounting on circuit boards. They have low power consumption, high current, and high temperature characteristics, making them suitable for various applications.

BCW66F is a NPN silicon planar medium power transistor in SOT23 package. Its main parameters are maximum collector-emitter voltage 45V, maximum collector-base voltage 75V, maximum emitter-base voltage 5V, maximum collector current 800mA, peak collector current 1000mA, base current 100mA, and working temperature range -55℃ to +150℃.

This document describes the features and characteristics of BCW 65 and BCW 66 general purpose NPN surface mount transistors. These transistors have a power dissipation of 250mW and a DC collector current of 800mA. They are suitable for surface mounting on printed circuit boards.

This document describes the maximum ratings, thermal characteristics, and electrical characteristics of LESHAN RADIO COMPANY, LTD. M11–1/2 1 3 2 General Purpose Transistors NPN Silicon.

This document describes the features and characteristics of BCW65 and BCW66, including their applications in general AF, high current gain, low collector-emitter saturation voltage, etc. It also provides information about complementary types BCW67 and BCW68.

This data sheet contains BCW61BLT1 data sheet, which mainly contains the maximum rating, thermal characteristics, device marking, electrical characteristics and other information.

BCW61A is a type of silicon PNP transistor in the BCW61 series. This series of transistors has the characteristics of high current gain, low collector-emitter saturation voltage and low noise, and can be used in audio input stages and driver applications.

BCW60 is a surface mount NPN transistor from Schneider Electric. It has a power dissipation of 250 mW and a SOT-23 package.

This document describes the features and characteristics of the NPN silicon AF transistors BCW 60 and BCX 70 introduced by the Semiconductor Group. These transistors are suitable for AF input stages and driver applications, and have high current gain, low collector-emitter saturation voltage, low noise between 30 Hz and 15 kHz, etc.

This data sheet is about BCW60ALT1/D, which is a NPN silicon small signal transistor with a maximum collector-emitter voltage of 32Vdc, a maximum collector-base voltage of 32Vdc, a maximum emitter-base voltage of 5.0Vdc and a maximum collector current of 100mAdc.

This document provides a detailed overview of the features and characteristics of a certain brand and model product, including the product's functions, uses, and applicable scenarios.