Industrial

BFT32 is a bipolar NPN device produced by Semelab with a maximum working voltage of 60V and a maximum current of 5A.

This document describes the specifications and characteristics of the BFT25 product. The BFT25 is an NPN 2 GHz wideband transistor primarily used in RF low power amplifiers. It features low power consumption, excellent wideband properties, and low noise.

BFT57DCSM is a dual bipolar NPN diode produced by Semelab. Its maximum working voltage is 160V and its maximum current is 0.2A. This diode uses the LCC2 ceramic surface mount package, and is suitable for high reliability applications.

This document describes the maximum ratings of the THYRISTOR MODULE, including repetitive peak off-state voltage, non-repetitive peak off-state voltage, repetitive peak reverse voltage, non-repetitive peak reverse voltage, etc. The module features isolated base and can be used for rectification and other general purposes.

The document contains information about a product, which is a switch from E-SWITCH. The switch has features such as P.C. MOUNTING CIRCUIT and 2PDT.

This product is PB series dual arm full bridge module, with isolated base, high surge capability, UL recognized and other characteristics, suitable for general purpose rectification

This document introduces the specifications of Precision Resistor Type PBH, including resistance range, tolerances, temperature coefficient, applicable temperature range, load capacity, thermal resistance, dielectric withstanding voltage, inductance, stability, etc.

BSH301 is a dual N-channel enhancement mode MOS transistor with a 40mΩ on-state resistance and RDSon rating down to 1.8V. It is suitable for applications such as Li-Ion safety switch and power management.

BSH299 is a P-channel enhancement mode MOS transistor produced by Philips Semiconductor. It features low threshold voltage, high-speed switching, and no secondary breakdown. It is widely used in power management, battery powered applications (such as cellular phones) and general purpose switches.

The BSH207 is a P-channel enhancement mode MOS transistor with very low threshold voltage and fast switching characteristics, making it ideal for battery powered applications and high-speed digital interfacing.

The BSH206 is a P-channel enhancement mode MOS transistor with features such as low threshold voltage, fast switching, and logic level compatibility. It is suitable for battery-powered applications and high-speed digital interfacing.

BSH205 is a low threshold voltage, fast switching P-channel enhancement mode MOS transistor from Philips Semiconductors. It is suitable for battery powered applications and high speed digital interfacing.