The product is a low-voltage, high-current NPN type transistor produced by PHILIPS. Its package form is SOT89, and it is used in DC-DC conversion, MOSFET gate driving, motor control, charging circuits, power switches, etc.
This document is a product data sheet for the Philips 2PD2150, an NPN low Vcesat Breakthrough in Small Signal (BISS) transistor. The device is housed in a SOT89 (SC-62/TO-243) SMD plastic package and is designed for applications such as DC-to-DC conversion, MOSFET gate driving, motor control, and power switches. Key features include low collector-emitter saturation voltage, high collector current capability, and high current gain.
| Collector-emitter voltage | 20 V |
|---|---|
| Collector current (DC) | 3 A |
| Junction temperature | 150 °C |
The maximum collector-emitter voltage is 20 V.
The device can handle a peak collector current of 3 A for pulses under 1 ms.