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The document introduces the BFT 93 PNP Silicon RF Transistor from Semiconductor Group. This transistor is suitable for low distortion broadband amplifiers up to 1 GHz, with collector currents ranging from 2mA to 20mA. It has a maximum rated collector-emitter voltage of 12V and a collector current of 35mA. The document also provides the electrical characteristics of the transistor.
This document describes the features and characteristics of the BFT 92W PNP Silicon RF Transistor, which is suitable for broadband amplifiers up to 2GHz with collector currents up to 20mA.
The document provides information about the features and characteristics of the BFT80 bipolar PNP device, including maximum working voltage, maximum working current, and amplification factor.
BFT59 is an NPN Bipolar device produced by Semelab. It has a maximum working voltage of 300V and a maximum current of 0.2A. The device is packaged in a TO18 package.
BFT53 is a NPN type transistor produced by Semelab. Its maximum working voltage is 35V and the maximum current is 1A. The package form is TO18 (TO206AA).
BFT45 is a PNP high-voltage transistor produced by Philips Semiconductors. Its features are low current (max. 500 mA) and high voltage (max. 250 V). This transistor is suitable for high voltage switching and amplification, as well as industrial and telephone applications.
BFT36A is a PNP silicon transistor produced by Semelab. It features fast switching and high pulse power. It is suitable for power switching circuits and motor control applications.
BFT34 is a NPN type bipolar transistor produced by Semelab. Its maximum working voltage is 100V and its maximum current is 5A. The product uses a TO39 metal package and has high reliability and stability.
