BCV27, BCV47 are NPN silicon planar Darlington transistors, SOT-23 package, power dissipation 250mW, maximum collector-emitter voltage 30V or 60V, maximum collector-base voltage 40V or 80V, maximum emitter-base voltage 10V.
This datasheet describes the BCV27 and BCV47 NPN surface mount Darlington transistors, which are Si-Epitaxial Planar Transistors designed for surface mounting. The document provides technical specifications including maximum ratings such as collector-emitter voltage, power dissipation, and junction temperature. This manual is written in German.
| Power dissipation | 250 mW |
|---|---|
| Collector current (dc) | 500 mA |
| Peak Collector current | 800 mA |
| Junction temperature | 150 °C |
The storage temperature range is from -65 to +150 °C.
The transistors must be mounted on a P.C. board with a 3 mm2 copper pad at each terminal.
The maximum power dissipation is 250 mW.
The maximum junction temperature is 150 /C.