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The BSH203 is a P-channel enhancement mode MOS transistor with very low threshold voltage and fast switching, making it ideal for battery powered applications and high-speed digital interfacing.
This document describes the features and characteristics of the Philips Semiconductors P-channel enhancement mode BSH202 MOS transistor. The transistor has a low threshold voltage, fast switching speed, and logic level compatibility, making it ideal for battery-powered applications and high-speed digital interfacing.
The Philips BSH201 MOS transistor is a P-channel enhancement mode field-effect power transistor with low threshold voltage, fast switching and logic level compatibility. It is ideal for battery powered applications and high speed digital interfacing.
The BSH121 is a N-channel enhancement mode field-effect transistor manufactured by Philips Semiconductors. It uses TrenchMOS technology and features very fast switching, low threshold voltage and a small surface mount package. It can be used for battery management, high speed switching and logic level translation applications.
BSH114 is an N-channel enhancement mode field effect transistor produced by NXP Semiconductors. It uses TrenchMOS™1 technology and has low on-state resistance, very fast switching speed and surface mount package. The applications include relay driver, DC/DC converter, general purpose switch, etc.
BSH112 is a N-channel enhancement mode field-effect transistor produced by PHILIPS, using TrenchMOS technology, with very fast switching speed, logic level compatibility, subminiature surface mount package, gate-source ESD protection diodes and other features.
BSH111 is an N-channel enhancement mode field-effect transistor produced by NXP Semiconductors, using TrenchMOS™ technology, with very fast switching speed, low threshold voltage and subminiature surface mount package. It can be used in battery management, high speed switch and logic level translator.
BSH108 is an N-channel enhancement mode field-effect transistor. It uses TrenchMOS™1 technology and has a very fast switching speed. It can be used for battery management, high speed switch, low power DC to DC converter and other applications.
BSH107 is an N-channel enhancement type MOS transistor produced by Philips Semiconductors. This product has a very low threshold voltage and extremely fast switching speed, making it ideal for battery powered applications and high speed digital interfacing. BSH107 is supplied in the SOT457 miniature surface mounting package.
BSH106 is a N-channel enhancement mode MOS switch transistor produced by Philips Semiconductors. It has a very low threshold voltage, fast switching speed, logic level compatibility and a subminiature surface mount package. It is suitable for battery powered applications and high speed digital interfacing.
The BSH105 is a N-channel enhancement mode MOS transistor produced by Philips Semiconductors. It features very low threshold voltage, fast switching and logic level compatibility. It is suitable for battery powered applications and high speed digital interfacing.
BSH104 is a N-channel enhancement mode MOS transistor produced by Philips Semiconductors. It has the characteristics of high speed switching, no secondary breakdown, direct interface to C-MOS, TTL, etc., and very low threshold. It can be widely used in power management, DC to DC converters, general purpose switches and battery powered applications.
The BSH102 is a N-channel enhancement mode MOS transistor manufactured by Philips Semiconductors. It features a very low threshold, high-speed switching, and no secondary breakdown. It is suitable for use in power management, DC to DC converters, battery powered applications, and as a general purpose switch.
BSH101 is a N-channel enhancement mode MOS transistor produced by Philips Semiconductors. The product has very low threshold, high speed switching and no secondary breakdown, and is suitable for power management, DC to DC converters, battery powered applications and other occasions.
BSH103 is a N-channel enhancement mode MOS transistor, with low threshold, high-speed switching, no secondary breakdown, etc. It is mainly used in power management, DC to DC converters, battery-powered applications, glue-logic, interface between logic blocks and periphery, general purpose switch, etc.
