The BSH102 is a N-channel enhancement mode MOS transistor manufactured by Philips Semiconductors. It features a very low threshold, high-speed switching, and no secondary breakdown. It is suitable for use in power management, DC to DC converters, battery powered applications, and as a general purpose switch.
This document is a product specification datasheet for the Philips BSH102, an N-channel enhancement mode MOS transistor packaged in SOT23. It provides comprehensive technical data including quick reference values, limiting ratings, and thermal characteristics.
The datasheet details the electrical characteristics of the device at 25°C, covering parameters such as drain-source breakdown voltage, gate-source threshold voltage, leakage currents, on-state resistance, capacitances, and switching times. It also includes typical curves for power derating, safe operating area, transfer characteristics, and output characteristics.
| Operating junction temperature | -55 to +150 °C |
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Yes, it allows for a direct interface to C-MOS and TTL circuits.
The maximum total power dissipation is 0.5 W when the temperature is 80 °C.
The maximum drain-source voltage is 30 V.
The maximum drain current is 0.85 A at a temperature of 80 °C.