BSH101 is a N-channel enhancement mode MOS transistor produced by Philips Semiconductors. The product has very low threshold, high speed switching and no secondary breakdown, and is suitable for power management, DC to DC converters, battery powered applications and other occasions.
The document is a technical specification sheet for the Philips BSH101, an N-channel enhancement mode MOS transistor packaged in SOT23. It details features such as very low threshold voltage and high-speed switching capabilities suitable for power management and DC to DC converters.
Key electrical parameters include a maximum drain-source voltage of 60V, a maximum continuous drain current of 0.7A, and a total power dissipation of 0.5W at 80°C. The datasheet also provides comprehensive switching time measurements and capacitance values under various conditions.
| Drain-source voltage (DC) | -60 V |
|---|---|
| Gate-source voltage (DC) | +20 V |
| Total power dissipation | 0.5 W |
| Drain-source on-state resistance | 0.81 Q |
| Package type | SOT23 |
The operating junction temperature ranges from -55°C to +150°C.
The maximum total power dissipation is 0.5 W when the temperature is 80°C.
The maximum drain-source voltage is 60 V.
The maximum drain current is 0.7 A when the temperature is 80°C.